Turan R. Noneguilibrium diffusion of dopants in silicon: numerical solutions of the diffusion eguation, application to redistribution of ion implanted dopants in (111) resrystallized silicon / R.Turan, 1990. - 23 p. - Текст : непосредственный.
Turan R. An improved technique for quasistatic C-V measurements / R.Turan,T.G.Finstad, 1990. - 9 p. - Текст : непосредственный.