ГПНТБ России - Полное описание

Полное описание

Walkosz, W. Atomic Scale Characterization and First-Principles Studies of Si₃N₄ Interfaces / by Weronika Walkosz. - Electronic text data. - New York, NY : Springer, 2011. - (Springer Theses). - URL: http://dx.doi.org/10.1007/978-1-4419-7817-2. - Загл. с экрана. - ISBN 978-1-4419-7817-2. - DOI 10.1007/978-1-4419-7817-2. - Текст : электронный.
Содержание:
Silicon Nitride Ceramics -- Theoretical Methods and Approximations -- Overview of Experimental Tools -- Structural Energetics of β−Si3N4 (1010) Surfaces -- Atomic Resolution Study of the Interfacial Bonding at SI3N4/CEO2−∂ Grain Boundaries -- Atomic Resolution Study of β−Si3N4/ SIO2 Interfaces -- Imagine Bulk α -SI3N4 -- Conclusions and Future Work -- Appendices -- Cited Literature.

ГРНТИ	УДК
47.09.41	666.3(043)

Рубрики:
materials science
biotechnology
physical chemistry
atomic structure
molecular structure
spectra
spectroscopy
microscopy
structural materials
materials Science
ceramics, Glass, Composites, Natural Methods
spectroscopy and Microscopy
physical Chemistry
structural Materials
atomic/Molecular Structure and Spectra
microengineering

Аннотация: This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline β−Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications. This Doctoral Thesis has been accepted by the University of Illinois-Chicago, Chicago, USA.Экз-ры полностью -504698128

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Walkosz W. Atomic Scale Characterization and First-Principles Studies of Si₃N₄ Interfaces / by Weronika Walkosz., 2011 r=on-line (Введено оглавление). - Текст : электронный.

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