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    Полное описание

    Wijesundara, M. B.J. Silicon Carbide Microsystems for Harsh Environments : монография / by Muthu B.J. Wijesundara, Robert Azevedo. - New York, NY : Springer, 2011. - on-line. - (MEMS Reference Shelf, ISSN 1936-4407 ; vol. 22). - URL: http://dx.doi.org/10.1007/978-1-4419-7121-0. - Загл. с экрана. - ISBN 978-1-4419-7121-0. - Текст : электронный.
    Содержание:
    Introduction to Harsh MEMs -- Silicon Carbide Processing -- Silicon Carbide Electronics -- Silicon Carbide MEMS Devices -- Silicon Carbide MEMs Device Packaging -- System Integration.

    ГРНТИ УДК
    47.03621.31-181.4

    Рубрики:
    engineering
    nanotechnology
    electronics
    microelectronics
    electronic circuits
    engineering
    electronics and Microelectronics, Instrumentation
    circuits and Systems
    nanotechnology and Microengineering

    Аннотация: p; emSilicon Carbide Microsystems for Harsh Environments/em reviews state-of-the-art Silicon Carbide (SiC) technologies that, when combined, create microsystems capable of surviving in harsh environments. Technological readiness of the system components, key issues when integrating these components into systems, and other hurdles in harsh environment operation are discussed at length. The authors use the SiC technology platform suite as the model platform for developing harsh environment Microsystems, and then detail the current status of the specific individual technologies (electronics, MEMS, packaging). Additionally, methods towards system level integration of components and key challenges are evaluated and discussed based on the current state of SiC materials processing and device technology. Issues such as temperature mismatch, process compatibility and temperature stability of individual components and how these issues manifest when building the system receive thorough investigation. This book also: /p ul     liAddresses the SiC platform for complete microsystems and goes beyond the individual device level/li     liProvides a comprehensive collection of SiC technologies information relevant to harsh environment microsystems/li     liCovers the challenges in combining SiC process and components to a microsystem/li     liDiscusses power source and signal transmission issues in the context of the harsh environment application space /li /ul p; emSilicon Carbide Microsystems for Harsh Environments/em not only reviews the state-of-the-art MEMS devices, but also provides a framework for the joining of electronics and MEMS along with packaging into usable harsh-environment-ready sensor modules./p.
    Доп. точки доступа:
    Azevedo, R.

    http://dx.doi.org/10.1007/978-1-4419-7121-0


    Держатели документа:
    Государственная публичная научно-техническая библиотека России : 123298, г. Москва, ул. 3-я Хорошевская, д. 17 (Шифр в БД-источнике (KATBW): -703633286)

    Шифр в сводном ЭК: 4b5ab6cb0bf880a0791efc5b309db934



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